The Role Of Catalysis In Semiconductors Gas Sensors

Category: VI Ukrainian-Polish Symposium

THE ROLE OF CATALYSIS IN SEMICONDUCTORS GAS SENSORS

I. Kocemba, S. Szafran, J. Rynkowski, T. Paryjczak

Institute of General and Ecological Chemistry, Technical University of Lodz

Zwirki 36, 90-924 Lodz, Poland

The principle of gas sensing by semiconductors is based on gas adsorption onto the semiconductor surface, which produces a change in conductance. Several reviews and monographs are available that describe recent developments and the current status of semiconducting gas sensors [1]. Gas sensors based on different oxides (SnO2, TiO2, ZnO) have been widely accepted as an important tool for detecting or monitoring gases such as: H2, CO, CH4 and H2S.

Catalytic effects play an important role in many areas of gas detection. All solid state gas sensors rely on the reaction of the gas at the solid surface and the consequent effect of this reaction on a measurable property or condition of the solid.

The main objective of this study is to consider how the mechanisms of adsorption or reaction described by the Langmuir adsorption isotherms and the mechanisms developed by Langmuir-Hinshelwood or Rideal-Eley can be applied to the study of the detection mechanisms. We intend to apply the Langmuir model, which is usually used for describing processes involved in heterogeneous catalysis, to metal oxide sensors. We would like to mark here that our paper is partly review. However, we suppose that the paper presented by us is probably the first one, which in a comprehensive manner, presented the problems of detection by the Langmuir isotherms.

Acknowledgement

This work was supported by grant KBN 3 T09B 004 19.

References

1. J. Janata, M. Josowicz and D. M. De Vaney: Anal. Chem. 66p(1994) 207R.

2. P. B. Weisz: J. Chem. Phys. 21 (1953) 1531.

3. Th. Wolkenstein: J. Chim. Phys. 54 (1957) 175.



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